2-D Hot Spot Temperature Simulation for PV Modules

Abstract

A two‐step method to simulate the spatially resolved temperature of a partially shaded cell in a crystalline silicon photovoltaic (PV) module is presented and tested. First, an efficient module electronic simulation tool computes the operating conditions of a module's constituent cells. Second, a two‐dimensional finite‐element analysis simulation, utilizing forward‐, and revers‐bias electroluminescence measurements, is performed to spatially resolved cell temperature. With an outdoor experiment, un‐encapsulated cell temperatures are directly measured under controlled heat transfer conditions. A peak local cell temperature of 144 °C is observed on a multi crystalline silicon cell dissipating 54 W heat in the experiment, 57 °C higher than the result from a non‐spatially resolved simulation. Experimental results indicate cells without significant Ohmic shunts are suitable for temperature simulation with the aid of reverse bias electroluminescence imaging, which yields a maximum temperature prediction error of less than 15 °C. However, simulation for cells with significant Ohmic shunts is prone to underestimate the cell temperature by up to 45 °C. Multiple shading fractions from 12 to 80% lead to severe heating scenarios in such case.

Reference Link
J. Qian, A. Thomson, M. Ernst, and A. Blakers, “Two-Dimensional Hot Spot Temperature Simulation for c-Si Photovoltaic Modules,” phys. stat. sol. (a) 49, 1800429 (2018). https://doi.org/10.1002/pssa.201800429
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