Apr 05, 2012|
This article has been featured on the Cover of Phys. Status Solidi RRL 5/2012: https://onlinelibrary.wiley.com/page/journal/18626270/homepage/cover/2012_6_05b.html
We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n‐type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) µm and a distance of 8.3 µm. An intrinsic amorphous Si (a‐Si)/p+‐type a‐Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a‐Si/n+‐type a‐Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm2‐sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy‐conversion efficiency of the (33 ± 2) µm thick cell is 7.2%.
|M. Ernst, R. Brendel, R. Ferré, and N.-P. Harder, “Thin macroporous silicon heterojunction solar cells,” phys. stat. sol. (RRL) 6 (5), 187–189 (2012).||https://doi.org/10.1002/pssr.201206113|